2012. 11. 28 1/2 semiconductor technical data mbrf10u60cta schottky barrier type diode revision no : 2 switching type power supply application. converter & chopper application. features h average output rectified current : i o =10a. h repetitive peak reverse voltage : v rrm =60v. h fast reverse recovery time : t rr =35ns. maximum rating (ta=25 ? ) electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit peak forward voltage (note) v fm i fm =5a - - 0.75 v repetitive peak reverse current (note) i rrm v rrm =rated - - 50 a reverse recovery time (note) t rr i f =1.0a, di/dt=-30a/ k - - 35 ns thermal resistance (note) r th(j-c) juction to case - - 4.5 ? /w characteristic symbol rating unit repetitive peak reverse voltage v rrm 60 v average output rectified current (tc=114 ? ) (note) i o 10 a peak one cycle surge forward current (non-repetitive 60hz) i fsm 100 a junction temperature t j -40 q 150 ? storage temperature range t stg -55 q 150 ? note : average forward current of centertap full wave connection. note : a value of one cell 3 1 2
2012. 11. 28 2/2 mbrf10u60cta revision no : 2 reverse current i r ( a) reverse voltage v r (v) i r - v r 0 102030405060 0.1 1 10 10,000 100 1,000 forward current i f (a) forward voltage v f (v) i f - v f 0.1 0.0 0.4 0.2 0.6 0.8 1.0 1 10 ta =25 c ta =75 c ta =125 c ta =75 c ta =25 c ta =125 c average forward current i f(av) (a) i f - t c case temperature tc ( c) 0 100 110 120 130 140 150 8 4 12 16 rated voltage r =4.5 c/w jc dc applied average forward power dissipation p f(av) (w) p f(av) - i f(av) average forward current i f(av) (a) 0 0 2468 10 12 8 8 4 4 16 reverse power dissipation p r (w) p r - v r reverse volta g e v r ( v ) 0 0 10 20 30 40 50 60 0.4 0.3 0.2 0.1 0.5 thermal resistance r th ( ? . w) r th(j-c) power time (s) 0 0.001 0.01 0.1 1 10 1 10 r =4.5 c/w th(j-c)
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